位置：首页 > IC中文资料第4122页 > FQAF85N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQAF85N06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 67A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.01Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 |   | |
FQAF85N06 | 60V N-Channel MOSFET 文件：653.18 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | | |
FQAF85N06 | 60V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | | ||
60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | ONSEMI 安森美半导体 | |
FQAF85N06产品属性
- 类型
描述
- 型号
FQAF85N06
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2026+ |
TO-3PF |
147 |
原装正品,假一罚十! |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD |
26+ |
sot23 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHILD |
24+ |
TO-247TO-3PTO-3PF |
8866 |
||||
仙童 |
05+ |
TO-247F |
800 |
原装进口 |
|||
FAIRCHILD |
0034+ |
TO-3PF |
140 |
全新 发货1-2天 |
|||
FAIRCHILD |
2023+ |
SMD |
2289 |
安罗世纪电子只做原装正品货 |
|||
onsemi(安森美) |
25+ |
TO-3PF |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
TO-3PF |
20948 |
样件支持,可原厂排单订货! |
|||
FAIRCHILD |
25+ |
TO-3PF |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
FQAF85N06规格书下载地址
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FQAF85N06数据表相关新闻
FQB34P10TM坚持十多年只为原装
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FQD10N20CTM 公司原装现货，假一赔十
2023-4-17FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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