150V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =42mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

功率 MOSFET，N 沟道，QFET®，150V，50A，42mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •50A, 150V, RDS(on)= 42mΩ（最大值）@VGS = 10 V, ID = 25A栅极电荷低（典型值：85nC)\n•低 Crss（典型值100pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C Maximum Junction Temperature Rating;

150V N-Channel MOSFET

文件：781.81 Kbytes Page：9 Pages

150V N-Channel MOSFET

文件：781.81 Kbytes Page：9 Pages

150V N-Channel MOSFET

文件：781.81 Kbytes Page：9 Pages

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

150V N-Channel MOSFET

文件：769.38 Kbytes Page：9 Pages

150V N-Channel MOSFET

文件：769.38 Kbytes Page：9 Pages