300V N-Channel MOSFET

300V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=43.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =69mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

N 沟道 QFET® MOSFET 300V, 43.5A, 69mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •43.5A, 300V, RDS(on)= 69mΩ（最大值）@VGS = 10 V, ID = 21.75A栅极电荷低（典型值：120nC)\n•低 Crss（典型值75pF)\n•100% 经过雪崩击穿测试\n• 100% Avalanche Tested;