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型号 功能描述 生产厂家 企业 LOGO 操作
FQA17P10

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA17P10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-18A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

FQA17P10

100V P-Channel MOSFET

ONSEMI

安森美半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

FAIRCHILD

仙童半导体

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA17P10产品属性

  • 类型

    描述

  • 型号

    FQA17P10

  • 功能描述

    MOSFET 100V P-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-3P
18746
样件支持,可原厂排单订货!
onsemi
25+
TO-3P
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
FSC
2016+
TO-247
3000
只做原装,假一罚十,公司可开17%增值税发票!
ON
23+
TO-3P
1562
正规渠道,只有原装!
FSC
18+
TO-3P
85600
保证进口原装可开17%增值税发票
FSC
24+
T0-3P
3026
全新原装环保
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
FAIRCHILD
24+
TO-247TO-3PTO-3PF
8866
FAIRCHILD
22+
TO-3P
20000
公司只做原装 品质保障
FSC
22+
TO-3P
5000
全新原装现货!自家库存!

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