isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

功率 MOSFET，N 沟道，QFET®，60 V，170 A，5.6 mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •170A, 60V, RDS(on)= 5.6mΩ（最大值）@VGS = 10 V, ID = 85A栅极电荷低（典型值：220nC)\n•低 Crss（典型值620pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\n•175°C maximum junction temperature rating;

60V N-Channel MOSFET

文件：650.39 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 170A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET

文件：425.46 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：365.15 Kbytes Page：8 Pages