| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FPF2172 | IntelliMAX??Advanced Load Management Products General Description The FPF2172 is a load switch which combines the functionality of the IntelliMAXTM series load switch with a very low forward voltage drop Schottky barrier rectifier. The integrated solution provides full protection to systems and loads which may encounter large current conditi | FAIRCHILD 仙童半导体 | ||
FPF2172 | FPF2172: IntelliMAX™ Advanced Load Management Products FPF2172是一款负载开关,将IntelliMAX™ 系列负载开关的功能与一个极低的正向压降肖特基势垒整流器相结合。 该集成解决方案为系统和负载可能遭遇的大电流条件提供了全面保护,采用非常紧凑的MLP 3x3封装。 该器件包含0.125Ω限流P沟道MOSFET,可以在1.8V至5.5V的输入电压范围内工作。 肖特基二极管用作壁垒,确保当MOSFET关闭且输出电压高于输入电压时无反向电流能够流通。 开关控制是通过能够直接连接低压控制信号的逻辑输入(ON)来实现的。 每个部件均包含热关断保护功能,当持续的过流条件导致过热时,该功能会关闭开关,以防止损坏部件。 当开关电流达到限流值时,部件会在恒流 • 1.8 V 到 5.5 V 的输入电压范围• 受控的打开功能• 200mA限流选项• 欠压闭锁• 热关断• <1uA 关断电流• 快速限流响应时间\n3 µs 至中度过流\n20ns到硬短路• 集成极低的 VF肖特基二极管,用于反向电流阻断; | ONSEMI 安森美半导体 | ||
FPF2172 | 封装/外壳:6-WDFN 裸露焊盘 包装:管件 描述:IC PWR SWTCH P-CH 1:1 MICROFT3X3 集成电路(IC) 配电开关,负载驱动器 | ONSEMI 安森美半导体 | ||
IntelliMAX??Advanced Load Management Products 文件:542.04 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
DSP Microcomputer GENERAL DESCRIPTION The ADSP-2171, ADSP-2172, and ADSP-2173 are single-chip microcomputers optimized for digital signal processing (DSP) and other high-speed numeric processing applications. The ADSP-2171 and ADSP-2172 are designed for 5.0 V applications. The ADSP-2173 is designed for 3.3 V appli | AD 亚德诺 | |||
Bit Error Rate Tester BERT DESCRIPTION The DS2172 Bit Error Rate Tester (BERT) is a software programmable test pattern generator, receiver, and analyzer capable of meeting the most stringent error performance requirements of digital transmission facilities. Two categories of test pattern generation (Pseudo-random and Repet | DALLAS | |||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | |||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 | |||
ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a | RFMD 威讯联合 |
FPF2172产品属性
- 类型
描述
- Compliance:
Pb-freeHalide free
- Status:
Active
- Description:
IntelliMAX™ Advanced Load Management Products
- Channels:
- ron (mΩ):
125
- I Max (A):
0.2
- VI Min (V):
1.8
- VI Max (V):
5.5
- Package Type:
WDFN-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
MicroFET(3x3) |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Fairchild/ON |
22+ |
MicroFET 3x3mm |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
25+ |
DFN6 |
55 |
全新原装正品支持含税 |
|||
ON Semiconductor |
23+ |
6-MLP3x3 |
7300 |
专注配单,只做原装进口现货 |
|||
ONSemiconductor |
24+ |
6-MLP(3x3) |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
|||
FSC |
25+ |
MicroFET 3x3mm |
3216 |
原装正品 价格优势 |
|||
ON Semiconductor |
24+ |
/ |
3000 |
全新、原装 |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
onsemi(安森美) |
26+ |
MicroFET(3x3) |
9850 |
原装认证现货库存-更多原厂可订 |
FPF2172规格书下载地址
FPF2172参数引脚图相关
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- FPF2186
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FPF2172数据表相关新闻
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2022-7-6FPBL10SH60-智能功率模块
一般描述 FPBL10SH60是一种先进的智能功率模块(SPM)飞兆半导体新开发的,旨在提供非常紧凑,成本低,但高性能交流电动机驱动器主要针对高速低功耗inverterdriven应用像洗衣机。它结合优化的电路保护和驱动器匹配低损耗IGBT的。高效的短路电流检测/保护是实现通过使用先进的电流感应IGBT芯片,允许连续监测IGBT的电流。系统的可靠性进一步增强,集成欠压锁定了保障。高高速内置HVIC提供光耦合器无IGBT栅极驱动能力,进一步降低了整体规模逆变器系统设计。此外,成立高压集成电路促进了单电源驱动拓扑利用有利要赶在FPBL10SH60只由一个驱动电源无负偏置电压。
2013-2-15
DdatasheetPDF页码索引
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