Advance Load Management Switch

FPF1107/08是IntelliMAX™ 系列的低RDS P沟道MOSFET负载开关。 集成的压摆率控制可防止浪涌电流干扰担负电源应用中通用的电容负载的电源电压轨。输入电压范围在1.2V至4V之间，可满足当今超便携式器件的最低电源要求。 开关控制是通过能够直接连接嵌入式处理器中的低压CMOS控制信号和GPIO的逻辑输入(ON引脚)来实现的。 •1.2至4V输入电压范围\n•典型值RDS(ON)：\n•在VIN=3.3V下为35mΩ\n•在VIN=1.8V下为55mΩ\n•在VIN=1.2V下为85mΩ\n•压摆率控制，tR： 130µs\n•FPF1108上的输出放电功能\n•在V

封装/外壳：4-UFBGA，WLCSP 包装：卷带（TR） 描述：IC PWR SWITCH P-CHAN 1:1 4WLCSP 集成电路（IC） 配电开关，负载驱动器

丝印代码：QD*；Advance Load Management Switch

文件：931.05 Kbytes Page：14 Pages

丝印代码：QD；Advance Load Management Switch

文件：745.5 Kbytes Page：16 Pages

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Melody IC

Optocoupler with Phototransistor Output

DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. FEATURES • High common mode rejection • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides

SOLID STATE I/O INTERFACE MODULE (DC INPUT MODULE)

文件：164.19 Kbytes Page：3 Pages