IntelliMAX™ 1V Rated Advanced Load Management Products

FPF1015/6/7/8系列是IntelliMAX高级压摆率负载开关，可提供极低的工作电压。 这些器件包含支持输入电压可达2.0V的34mΩ N沟道MOSFET。 这些压摆率器件控制开关的开启并防止电源电压轨产生过大的浪涌电流。 输入电压的工作范围在0.8V至1.8V之间，可满足当今超便携式器件的最低电源要求。 通过可与低压控制信号直接连接的逻辑输入(ON)来实现开关控制。 FPF1016和FPF1018具有片上下拉电阻，可在开关关断时快速控制输出放电。 FPF1015/6/7/8系列采用节省空间的2X2 MLP-6L封装。 •0.8V到1.8V的输入电压范围\n•（典型值）RDS(ON) = 34mΩ @ VON - VIN = 2.0V\n•输出放电功能\n•在ON引脚上具有内部下拉电阻\n•精确压摆率控制的开启时间\n•低<1µA静态电流\n•ESD保护，超过8000V HBM，2000V CDM\n•符合RoHS标准\n•无卤素化合物和锑氧化物;

IntelliMAX 1V Rated Advanced Load Management Products

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封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CH 1:1 6MICROFET 集成电路（IC） 配电开关，负载驱动器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3