HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 350V • hFE DC current gain 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A