EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

EconoPIM3 Modul mit Trench

文件：787.56 Kbytes Page：12 Pages

封装/外壳：模块 包装：托盘 描述：IGBT MODULE 1200V 150A 分立半导体产品 晶体管 - IGBT - 模块

EconoPACK3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode

文件：319.86 Kbytes Page：8 Pages