30V P-Channel Enhancement Mode MOSFET

Features ● RDS(ON) ≦ 75mΩ@VGS =-10V ● RDS(ON) ≦ 100mΩ@VGS =-4.5V ● Super high density cell design for extremely low RDS(ON) ● In compliance with EU RoHS 2002/95/EC directives. ● Suffix -H indicates Halogen-free part, ex.FMS2303-H. Case : Molded plastic, SOT-23

Mosfets

DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

DUAL PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

GENERAL DESCRIPTION The ALD2303A/ALD2303 is a precision monolithic high performance dual voltage comparator built with advanced silicon gate CMOS technology. It features very high typical input impedance of 1012Ω; low input bias current of 10pA; very low power dissipation of 7.5µA per comparator;

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Switching Times with Inductive Loads: tf =

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages

BASE BAND INTERFACE IC

文件：195.84 Kbytes Page：5 Pages