N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.3Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率MOSFET 600V-700V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

文件：2.52205 Mbytes Page：8 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.72801 Mbytes Page：16 Pages

Power MOSFET

文件：193.74 Kbytes Page：3 Pages

N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes Page：5 Pages