80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • VCEO = 80V • VSAT = 90mΩ • IC = 1.5A • Low Equivalent On Resistance • Low Saturation Voltage • hFE Characterized up to 3.0A • Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) • “Green” Devices (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Applications

SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • Extremely Low Equivalent On Resistance

SuperSOT??80V NPN SILICON LOW SATURATION TRANSISTOR

文件：240.96 Kbytes Page：6 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 80V 1.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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SuperSOT??80V NPN SILICON LOW SATURATION TRANSISTOR

文件：240.96 Kbytes Page：6 Pages