SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • Extremely Low Equivalent On Resistance

80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • VCEO = 80V • VSAT = 90mΩ • IC = 1.5A • Low Equivalent On Resistance • Low Saturation Voltage • hFE Characterized up to 3.0A • Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) • “Green” Devices (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Applications

SuperSOT??80V NPN SILICON LOW SATURATION TRANSISTOR

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 80V 1.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages

ULTRAFAST RECTIFIER 6 AMPERES 200 VOLTS

文件：69.78 Kbytes Page：4 Pages