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FMMT493价格

参考价格:¥0.6064

型号:FMMT493ATA 品牌:Diodes 备注:这里有FMMT493多少钱,2026年最近7天走势,今日出价,今日竞价,FMMT493批发/采购报价,FMMT493行情走势销售排行榜,FMMT493报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FMMT493

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

ZETEX

FMMT493

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features ● BVCEO > 100V ● IC = 1A High Continuous Collector Current ● ICM = 2A Peak Pulse Current ● 500mW Power Dissipation ● hFE Characterised Up to 2A for High Current Gain Hold Up ● Complementary PNP Type: FMMT593 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Haloge

DIODES

美台半导体

FMMT493

NPN Silicon Planar Medium Power Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM=250mW(Tamb=25℃) • Collector current: Ic=1A • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensi

MCC

FMMT493

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

HMSEMI

华之美半导体

FMMT493

丝印代码:493;Plastic-Encapsulate Transistors

FEATURES  Complementary Type FMMT593

GWSEMI

唯圣电子

FMMT493

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Complementary Type FMMT593

HTSEMI

金誉半导体

FMMT493

Medium Power Transistor

Features ● Medium power transistor.

KEXIN

科信电子

FMMT493

丝印代码:493;Low equivalent on-resistance

TRANSISTOR (NPN) FEATURES Low equivalent on-resistance

FS

FMMT493

NPN Switching Transistor

Features - Low saturation voltage. - High hFE Max. 300@250mA. -le=1A

TECHPUBLIC

台舟电子

FMMT493

PNP Transistor

文件:1.81616 Mbytes Page:4 Pages

PJSEMI

平晶半导体

FMMT493

丝印代码:493;NPN Transistor

文件:1.60117 Mbytes Page:4 Pages

PJSEMI

平晶半导体

FMMT493

NPN小信号三极管

CHINABASE

创基电子

FMMT493

晶体管

JSCJ

长晶科技

FMMT493

NPN, 100V, 1A, SOT23

DIODES

美台半导体

SOT23 60V NPN SILICON PLANAR

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • VCESAT = 0.5V @1A • 500mW Power Dissipation • Low Saturation Voltage • High hFE Min 300@250mA • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to

DIODES

美台半导体

60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR

Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring improved circuit efficiencies. Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications

ZETEX

60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR

Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring improved circuit efficiencies. Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications

ZETEX

60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR

Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring improved circuit efficiencies. Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications

ZETEX

General Purpose Transistor

Features - Complementary type FMMT593 - Low saturation voltage - High hFE Max. 300@250mA - IC = 1A

COMCHIP

典琦

丝印代码:493;General Purpose Transistor

Features - Low saturation voltage. - High hFE Max. 300@250mA. - IC = 1A .

COMCHIP

典琦

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features ● BVCEO > 100V ● IC = 1A High Continuous Collector Current ● ICM = 2A Peak Pulse Current ● 500mW Power Dissipation ● hFE Characterised Up to 2A for High Current Gain Hold Up ● Complementary PNP Type: FMMT593 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Haloge

DIODES

美台半导体

iMOTION™ Modular Application Design Kit

Eval-M1-CM610N3 is an evaluation board formotor drive applications based on a 3-phase IPM. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon's IPM technology formotor drives. The kit demonstrates Infineon’s IPM technology formotor drives. Main feat

INFINEON

英飞凌

iMOTION™ Modular Application Design Kit

Eval-M3-CM615PN is an evaluation board for motor drive applications with single phase PFC integrated 3 phase IPM. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon’s motion control IC and IPM technology for motor drives with single phase PFC. Main

INFINEON

英飞凌

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features ● BVCEO > 100V ● IC = 1A High Continuous Collector Current ● ICM = 2A Peak Pulse Current ● 500mW Power Dissipation ● hFE Characterised Up to 2A for High Current Gain Hold Up ● Complementary PNP Type: FMMT593 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Haloge

DIODES

美台半导体

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features ● BVCEO > 100V ● IC = 1A High Continuous Collector Current ● ICM = 2A Peak Pulse Current ● 500mW Power Dissipation ● hFE Characterised Up to 2A for High Current Gain Hold Up ● Complementary PNP Type: FMMT593 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Haloge

DIODES

美台半导体

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:385.27 Kbytes Page:7 Pages

DIODES

美台半导体

NPN Transistors

文件:812.2 Kbytes Page:2 Pages

KEXIN

科信电子

120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

文件:457.57 Kbytes Page:7 Pages

DIODES

美台半导体

SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR

文件:146.46 Kbytes Page:6 Pages

DIODES

美台半导体

120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

文件:457.57 Kbytes Page:7 Pages

DIODES

美台半导体

120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

文件:457.57 Kbytes Page:7 Pages

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 60V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 100V 1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:385.27 Kbytes Page:7 Pages

DIODES

美台半导体

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:385.27 Kbytes Page:7 Pages

DIODES

美台半导体

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

文件:385.27 Kbytes Page:7 Pages

DIODES

美台半导体

High Voltage Transistor(PNP)

PNP SILICON HIGH VOLTAGE TRANSISTORS

MOTOROLA

摩托罗拉

High Voltage Transistors

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

High Voltage Transistors

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

High Voltage Transistors

High Voltage Transistors PNP Silicon

MOTOROLA

摩托罗拉

PULSE-WIDTH-MODULATION CONTROL CIRCUITS

文件:210 Kbytes Page:8 Pages

TI

德州仪器

FMMT493产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Yes

  • Product Type:

    NPN

  • IC (A):

    1 A

  • ICM (A):

    2 A

  • PD (W):

    0.5 W

  • hFE (min):

    100 Min

  • hFE(@ IC):

    0.25 A

  • hFE(Min 2):

    60

  • hFE(@ IC2):

    0.5 A

  • VCE (SAT)Max (mV):

    300 mV

  • VCE (SAT) (@ IC/IB) (A/m A):

    0.25/25

  • VCE (SAT)(Max.2):

    600 mV

  • VCE (SAT) (@ IC/IB2) (A/mA):

    1/100

  • fT (MHz):

    150 MHz

  • RCE(SAT):

    N/A mΩ

  • Packages:

    SOT23

更新时间:2026-8-4 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
24+
SOT-23(TO-236)
7957
原厂订货渠道,支持BOM配单一站式服务
ZETEX
25+
SOT-23
34946
ZETEX全新特价FMMT493TA即刻询购立享优惠#长期有货
DIODES
2540+
SOT23
9854
只做原装正品假一赔十为客户做到零风险!!
Slkor/萨科微
24+
SOT-23
50000
Slkor/萨科微一级代理,价格优势
DIODES
24+
N/A
10000
只做原装,实单最低价支持
DIODES INC.
25+
SMD
918000
明嘉莱只做原装正品现货
DIODES/美台
26+
SOT23
18000
原装正品,可配单,支持实单
DIODES(美台)
25+
N/A
29327
双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
CJ长电
2016
SOT23
2220
全新原装 正品现货

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