500V Silicon NPN high voltage switching transistor

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

500V Silicon NPN high voltage switching transistor

文件：236.93 Kbytes Page：6 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 450V 0.15A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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500V Silicon NPN high voltage switching transistor

文件：236.93 Kbytes Page：6 Pages

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