450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

500V Silicon NPN high voltage switching transistor

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 450V 0.15A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

500V Silicon NPN high voltage switching transistor

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丝印代码：459；450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

HIGH VOLTAGE VIDEO AMPLIFIERS

N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch