262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

262,144-Bit (32K x 8) High Performance CMOS EPROM

General Description The FM27C256 is a 256K Electrically Programmable Read Only Memory. It is manufactured in Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range. Features ■ High performance CMOS

封装/外壳：28-CDIP（0.600"，15.24mm）窗口 包装：管件 描述：IC EPROM 256KBIT PARALLEL 28CDIP 集成电路（IC） 存储器

封装/外壳：28-CDIP（0.600"，15.24mm）窗口 包装：管件 描述：IC EPROM 256KBIT PARALLEL 28CDIP 集成电路（IC） 存储器

262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified

General Description The 27C256 is a high-speed 256K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements. The 27C256 is designed to operate with a single a5V

256K (32K x 8) CMOS EPROM

DESCRIPTION The Microchip Technology Inc. 27C256 is a CMOS 256K bit electrically Programmable Read Only Memory (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in

256K-bit CMOS EPROM (32K x 8)

256K-bit CMOS EPROM (32K x 8)

64K(8K x 8) UV ERASABLE PROMs

262,144-Bit (32K x 8) High Performance CMOS EPROM

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