位置：首页 > IC中文资料第462页 > FLM7785-4F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FLM7785-4F | C-Band Internally Matched FET 文件：236.34 Kbytes Page：4 Pages | EUDYNA |   | |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated | NEC 瑞萨 | | ||
7.70-8.50GHz 4-Watt Internally-Matched Power FET 文件：163.58 Kbytes Page：4 Pages | Excelics | | ||
7.70-8.50GHz 4-Watt Internally-Matched Power FET 文件：163.58 Kbytes Page：4 Pages | Excelics | | ||
7.70-8.50GHz Multi-Stage Power Amplifier 文件：162.8 Kbytes Page：4 Pages | Excelics | |
FLM7785-4F产品属性
- 类型
描述
- 型号
FLM7785-4F
- 制造商
SUMITOMO ELECTRIC Device Innovations Inc
- 功能描述
High Power GaAs FETs, C-Band, 8.5dB, 7.7 8.5GHz, 1100mA, Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUMITOMO |
2021+ |
SMT |
3600 |
一级代理销售住友SUMITOMO高频,射频,晶体,微波管 |
|||
SUMITOM |
23+ |
N/A |
7560 |
原厂原装 |
|||
FUJITSU/富士通 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FUJITSU/富士通 |
24+ |
TO-59 |
60000 |
全新原装现货 |
|||
FREESCALE |
24+ |
TO-59 |
200 |
价格优势 |
|||
FUJITSU |
18+ |
TO-59 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FUJITSU/富士通 |
24+ |
15+ |
37279 |
郑重承诺只做原装进口现货 |
|||
FUJITSU/日本富士通 |
23+ |
IB |
5000 |
公司只做原装,可配单 |
|||
SUMITOMO |
21+ |
标准封装 |
237 |
进口原装,订货渠道! |
|||
FUJITSU/富士通 |
24+ |
NA/ |
270 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
FLM7785-4F规格书下载地址
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