Internally Matched Power GaAs FET

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8W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level ■ HIGH POWER P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz ■ HIGH GAIN G1dB=5.0 dB at 14.0 GHz to 14.5 GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

14.0-14.5GHz, 8W Internally Matched Power FET

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14.0-14.5 GHz 8-Watt Internally Matched Power FET

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