C-Band Power GaAs FET

DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEA

C-Band Power GaAs FET

DESCRIPTION\nThe FLC167WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.\nFujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.FEATURES\n• Hig • High Output Power: P1dB = 31.8dBm(Typ.)\n• High Gain: G1dB = 7.5dB(Typ.)\n• High PAE: ηadd = 35%(Typ.)\n• Proven Reliability\n• Hermetic Metal/Ceramic Package ;

Ultra fast low-loss rectifier

DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. The SOD87 package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low lea

Silicon epitaxial planar type

For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

16-Bit CMOS Single-Chip Microcontroller

Introduction The C167SR is a new derivative of the Siemens C16x Family of full featured single-chip CMOS microcontrollers. It combines high CPU performance (up to 10 million instructions per second) with high peripheral functionality and enhanced IO-capabilities. It also provides on-chip high-s

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE