1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：128.509 Kbytes Page：4 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：101.32 Kbytes Page：2 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：128.509 Kbytes Page：4 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：101.32 Kbytes Page：2 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：101.32 Kbytes Page：2 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：128.509 Kbytes Page：4 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：128.509 Kbytes Page：4 Pages

1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL

文件：101.32 Kbytes Page：2 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

SINGLE TMOS POWER MOSFET 30 VOLTS

WaveFET™ Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withst

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages