NPN Epitaxial Silicon Transistor

Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJY4002R

丝印代码：S02；NPN Epitaxial Silicon Transistor

Description Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Features • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 10 kΩ, R2 = 10 kΩ) Application • Switching, Interface, and

NPN 外延硅晶体管，带偏置电阻

带内置电阻的晶体管由于其减少的零件数量和简化的电路设计，可极大地节约空间和成本。 •100 mA 输出电流处理能力\n•内置偏置电阻（R1 = 10 KΩ、R2 = 10 KΩ）;

封装/外壳：SC-89，SOT-490 包装：卷带（TR） 描述：TRANS PREBIAS NPN 200MW SOT523F 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages