Si N-channel Junction FET

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封装/外壳：SC-70，SOT-323 包装：散装 描述：JFET N-CH 20V 0.1W SOT323 分立半导体产品 晶体管 - JFET

JFET N-CH 20V 0.1W SOT323

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597

Silicon Rectifier Ultra Fast, 200V, 8A

Description: The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: ● Ultrafast 50ns Recovery Time ● 175°C Operating Junction Temperature ● Popular TO220 Package ● Epoxy meets UL94, VO @

1.55 關m Laser-Diode Coaxial Module

GENERAL DESCRIPTION The OL592N, OL597N, OL5492N, and OL5497N are 1.55 μm, MQW InGaAsP/InP laser-diode coaxial modules with single-mode fiber pigtails. These modules are optimal light sources for high-capacity long-haul optical transmission systems. FEATURES • Fiber output power: Pf=1 mW • Sing

RF & MICROWAVE TRANSISTORS UHF TVLINEAR APPLICATIONS

DESCRIPTION The SD1449 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. . 860 MHz .

UHF LINEAR POWER TRANSISTOR

The RF Line UHF Linear Power Transistor . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. • Band IV and V (470–860 MHz) • 1.0 W — Pref @ –58 dB IMD • 20