Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.5V(Max) @IC= 1A APPLICATIONS · Electronic Ballast · Switch Mode Power Supplies

NPN芯片晶体管

FJP5555是一款1050 V 5 A NPN硅外延平面晶体管。 FJP5555设计用于高速开关应用，采用业界标准TO-220封装，提供设计灵活性以及出色的功耗性能。 •高电压能力\n•高开关速度\n•宽安全工作范围;

High Voltage Switch Mode Application

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NPN Silicon Transistor

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NPN Silicon Transistor

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NPN Silicon Transistor

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丝印代码：J5555；NPN Silicon Transistor

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NPN Silicon Transistor

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 400V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MOS INTEGRATED CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For high speed switching ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

High Voltage Switch Mode Application

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TVText Pro

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