FJP5200: NPN Epitaxial Silicon Transistor

音频功率放大器 高电流能力： IC = 15A。\n 高功耗： 80瓦。\n 高频率： 30MHz.\n 高电压： VCEO=250V\n 宽S.O.A可实现可靠操作\n 极佳的增益线性度可实现低THD。\n FJP1943的补充器件\n 提供热SPICE模型和电气SPICE模型\n 相同的晶体管还可用于：\n TO264封装，2SC5200/FJL4315： 150瓦\n TO3P封装，2SC5242/FJA4313： 130瓦\n TO220F封装，FJPF5200： 50瓦;

Audio Power Amplifier

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NPN Epitaxial Silicon Transistor

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NPN Epitaxial Silicon Transistor

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封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 250V 17A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 250V 17A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Silicon Transistor

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FAIRCHILD Small Signal Transistors

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

RF dual gain-stage

DESCRIPTION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise (NF = 3.6dB) makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated equipment. Inputs and outputs are matched to 50Ω. The enable pin allows the designer the abilit

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

1.55 關m Laser-Diode DIP Module

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High Efficiency LED, 5 mm Tinted Non-Diffused Package

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