NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJNS4213R

NPN Epitaxial Silicon Transistor

封装/外壳：TO-226-3，TO-92-3 短体 包装：卷带（TR） 描述：TRANS PREBIAS NPN 300MW TO92S 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-226-3，TO-92-3 短体 包装：卷带（TR） 描述：TRANS PREBIAS NPN 300MW TO92S 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCHES

FEATURES ■ Micropower Operation ■ Operate With North or South Pole ■ 2.4 V to 5.5 V Battery Operation ■ Chopper Stabilized Superior Temperature Stability Extremely Low Switch-Point Drift Insensitive to Physical Stress ■ ESD Protected to 5 kV ■ Sol id-State Reliability ■ Small Size ■

AQ-H SOLID STATE RELAY

FEATURES 1. Compact DIP type SSR that’s ideal for AC load control 2. Supports 0.3 A, 0.6 A, 0.9 A and 1.2 A ON-state RMS currents. 3. The 1.2 A type saves space with a DIP 8-pin package. (Competitor only provides a 16-pin type.) 4. Only ours handles both 100 and 200 V AC loads This

TOPFET high side switch SMD version

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. FEATURES • Vertical power TrenchMOS • Low on-state resistance • CMOS logic compatible • Very low quiescent current • Overtemperature protection •

TOPFET high side switch SMD version

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. FEATURES • Vertical power TrenchMOS • Low on-state resistance • CMOS logic compatible • Very low quiescent current • Overtemperature protection •