NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=8A ·High Current Capability ·High Power Dissipation ·Complement to Type FJL4215 APPLICATIONS · High−Fidelity Audio Output Amplifier · General Purpose Power

NPN外延硅晶体管

•高电流能力：IC = 15A\n•大功率损耗：150瓦特\n•高频率：30 MHz\n•高压：VCEO= -250V\n•宽 S.O.A 可实现可靠操作\n•极佳的增益线性度可实现低 THD\n•2SA1943/FJL4215 的补充器件\n•提供热 Spice 模型和电气 Spice 模型;

Audio Power Amplifier

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NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

丝印代码：J4315O；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

丝印代码：J4315R；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：TRANS NPN 250V 17A TO264-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SMPS MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

High-Speed, Low-Power, Single-Supply, Multichannel, Video Multiplexer-Amplifiers

General Description The MAX4310–MAX4315 single-supply mux-amps combine high-speed operation, low-glitch switching, and excellent video specifications. The six products in this family are differentiated by the number of multiplexer inputs and the gain configuration. Features ♦Singl

High-Speed, Low-Power, Single-Supply, Multichannel, Video Multiplexer-Amplifiers

General Description The MAX4310–MAX4315 single-supply mux-amps combine high-speed operation, low-glitch switching, and excellent video specifications. The six products in this family are differentiated by the number of multiplexer inputs and the gain configuration. Features ♦Singl

High-Speed, Low-Power, Single-Supply, Multichannel, Video Multiplexer-Amplifiers

General Description The MAX4310–MAX4315 single-supply mux-amps combine high-speed operation, low-glitch switching, and excellent video specifications. The six products in this family are differentiated by the number of multiplexer inputs and the gain configuration. Features ♦Singl

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.