NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.0V(Max) @IC=8A ·High Current Capability ·High Power Dissipation ·Complement to Type FJL4215 APPLICATIONS · High−Fidelity Audio Output Amplifier · General Purpose Power

NPN外延硅晶体管

Audio Power Amplifier

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NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：TRANS NPN 250V 17A TO264-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series

●General Description ROHM’s BU42xx and BU43xx series are CMOS Voltage Detector ICs with adjustable output delay. It is a high-accuracy, low current consumption Voltage Detector IC series with a built-in delay circuit. The lineup was established with two output types (Nch open drain and CMOS

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Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series

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