FJ451LE/E晶体管资料
FJ451LE/E别名：FJ451LE/E三极管、FJ451LE/E晶体管、FJ451LE/E晶体三极管
FJ451LE/E生产厂家：日本富士通公司
FJ451LE/E制作材料：
FJ451LE/E性质：微波 （MW）_静噪放大 （LN）_宽频带放大 （A）
FJ451LE/E封装形式：贴片封装
FJ451LE/E极限工作电压：25V
FJ451LE/E最大电流允许值：0.04A
FJ451LE/E最大工作频率：<1MHZ或未知
FJ451LE/E引脚数：4
FJ451LE/E最大耗散功率：0.4W
FJ451LE/E放大倍数：
FJ451LE/E图片代号：G-195
FJ451LE/Evtest：25
FJ451LE/Ehtest：999900
- FJ451LE/Eatest：0.04
FJ451LE/Ewtest：0.4
FJ451LE/E代换 FJ451LE/E用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GENERAL PURPOSE RECTIFIER
| POWEREX |   | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Silicon N-Channel JFET Transistor VHF/UHF Amplifier 文件：23.15 Kbytes Page：2 Pages | NTE | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AVAGO/安华高 |
26+ |
DIP |
99680 |
只做原装,欢迎来电资询 |
|||
KEMET |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
AVAGO |
22+ |
DIP8 |
8000 |
原装正品支持实单 |
|||
TI |
24+ |
SOP |
3650 |
||||
AVGO |
26+ |
DIP8 |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
TEXAS |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
AVAGO/安华高 |
25+ |
DIP SOP |
19795 |
全新原装正品支持含税 |
|||
AGILENT |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
AVAGO/安华高 |
26+ |
DIP |
20000 |
公司只有正品,实单来谈 |
|||
原厂 |
专业光耦 |
DIP8 |
65800 |
光耦原装优势主营型号-可开原型号增税票 |
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FJ451LE/E规格书下载地址
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DdatasheetPDF页码索引
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