FJ451LE/E晶体管资料
FJ451LE/E别名：FJ451LE/E三极管、FJ451LE/E晶体管、FJ451LE/E晶体三极管
FJ451LE/E生产厂家：日本富士通公司
FJ451LE/E制作材料：
FJ451LE/E性质：微波 （MW）_静噪放大 （LN）_宽频带放大 （A）
FJ451LE/E封装形式：贴片封装
FJ451LE/E极限工作电压：25V
FJ451LE/E最大电流允许值：0.04A
FJ451LE/E最大工作频率：<1MHZ或未知
FJ451LE/E引脚数：4
FJ451LE/E最大耗散功率：0.4W
FJ451LE/E放大倍数：
FJ451LE/E图片代号：G-195
FJ451LE/Evtest：25
FJ451LE/Ehtest：999900
- FJ451LE/Eatest：0.04
FJ451LE/Ewtest：0.4
FJ451LE/E代换 FJ451LE/E用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GENERAL PURPOSE RECTIFIER
| POWEREX |   | ||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Single Supply, Low-Power, High Output, Programmable Buffer 文件：252.48 Kbytes Page：12 Pages | NSC 国半 | | ||
Silicon N-Channel JFET Transistor VHF/UHF Amplifier 文件：23.15 Kbytes Page：2 Pages | NTE | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AGILENT |
25+ |
DIP8 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
AVAGO/安华高 |
26+ |
DIP |
20000 |
公司只有正品,实单来谈 |
|||
AVAGO/安华高 |
25+ |
DIP |
18000 |
原装正品,全新来谈 |
|||
TI |
17+ |
SOP8 |
9988 |
只做原装进口,自己库存 |
|||
TI |
SOP8 |
02+ |
37 |
全新原装进口自己库存优势 |
|||
TI/德州仪器 |
23+ |
SOP-8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
Powerex |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
TI |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
|||
AVAGO/安华高 |
26+ |
DIP |
8000 |
只有原装 |
|||
AVGO |
23+ |
DIP8 |
65600 |
FJ451LE/E芯片相关品牌
FJ451LE/E规格书下载地址
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DdatasheetPDF页码索引
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