位置：首页 > IC中文资料 > FIR80N085PG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FIR80N085PG | N-ChannelEnhancementModePowerMosfet 文件：4.37678 Mbytes Page：7 Pages | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=85V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HIPERFET-TMMOSFETISOPLUS220-TM Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division |  | | |
HiPerFETMOSFETISOPLUS220 Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETTMPowerMOSFETs Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
福斯特 |
24+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
福斯特 |
1000 |
原装现货支持BOM配单服务 |
|||||
FIRST/福斯特 |
2048+ |
TO-220/252 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
FIRST/福斯特 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
FIRST/福斯特 |
21+ROHS |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
first |
2020+ |
TO-220 |
39210 |
公司代理品牌,原装现货超低价清仓! |
|||
first |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
FIRST/福斯特 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
FIRST/福斯特 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
first |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
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DdatasheetPDF页码索引
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