3.3V LVDS High Speed Differential Driver/Receiver

General Description This driver and receiver pair are designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signals to LVDS levels with a typical differential output swing of 350mV and the receiver translates LVDS signa

3.3V LVDS High Speed Differential Driver/Receiver

文件：1.53833 Mbytes Page：16 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 1/1 14TSSOP 集成电路（IC） 驱动器，接收器，收发器

3.3V LVDS High Speed Differential Driver/Receiver

General Description This driver and receiver pair are designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signals to LVDS levels with a typical differential output swing of 350mV and the receiver translates LVDS signa

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRANSCEIVER FULL 1/1 14TSSOP 集成电路（IC） 驱动器，接收器，收发器

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.1 Kbytes Page：2 Pages