型号 功能描述 生产厂家 企业 LOGO 操作
FGY75T120SWD

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features 

ONSEMI

安森美半导体

FGY75T120SWD

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features • M

ONSEMI

安森美半导体

FGY75T120SWD

1200V 75A 场截止型VII分立式IGBT,Power TO247-3L封装

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features • M

ONSEMI

安森美半导体

Ultra Field Stop IGBT, 1200 V, 75 A

General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s

ONSEMI

安森美半导体

1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

NCEPOWER

新洁能

POW-R-PAK 75A / 1200V 3 phase IGBT Assembly

Description: The Powerex POW-R-PAKTM is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. Features: ■ High performance IGBT inverter bridge

POWEREX

更新时间:2025-11-2 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
ON(安森美)
2511
TO-247-3
8484
电子元器件采购降本30%!原厂直采,砍掉中间差价
FUJITSU
19+
TO247
60
原装
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
ON(安森美)
2447
TO-252-3
115000
450个/管一级代理专营品牌!原装正品,优势现货,长期
ON
24+
TO-247-3
25000
ON全系列可订货
ON
24+
NA
3000
进口原装 假一罚十 现货
ONN
2526+
原厂封装
204790
只做原装优势现货库存 渠道可追溯
onsemi(安森美)
24+
TO247
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
onsemi
两年内
NA
187
实单价格可谈

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