Ultra Field Stop IGBT, 1200 V, 75 A

General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well s

封装/外壳：TO-247-3 变式 包装：管件 描述：IGBT 1200V 75A UFS 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features • M

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), Non SCR, Power TO247-3L, 1200V, 1.7V, 75A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS and ESS. Features 

1200V, 75A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

POW-R-PAK 75A / 1200V 3 phase IGBT Assembly

Description: The Powerex POW-R-PAKTM is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. Features: ■ High performance IGBT inverter bridge