位置：首页 > IC中文资料第7686页 > FGP20N6S2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 |   | |
FGP20N6S2 | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 28A 125W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
FGP20N6S2 | IGBT 600V 28A 125W TO220AB | ONSEMI 安森美半导体 | | |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 28A 125W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and re | Fairchild 仙童半导体 | |
FGP20N6S2产品属性
- 类型
描述
- 型号
FGP20N6S2
- 功能描述
IGBT 晶体管 Sgl N-Ch 600V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂 |
23+ |
标准封装 |
15352 |
振宏微原装正品,假一罚百 |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHILD/仙童 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHIL |
24+ |
TO-220 |
8866 |
||||
仙童 |
06+ |
TO-220 |
5000 |
原装 |
|||
Fairchild/ON |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
onsemi |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD |
23+ |
TO-220 |
56927 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
恩XP |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
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FGP20N6S2规格书下载地址
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DdatasheetPDF页码索引
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