Trench and Field Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=1.35V@IC=75A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

IGBT - Field Stop, Trench 75 A, 650 V

Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat)

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FS4 LOW VCESAT IGBT 650V 75A TO2 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - Field Stop, Trench 650 V, 75 A

Description Field stop 4th generation Low VCE(sat) IGBT technology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat)

封装/外壳：TO-247-4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FS4 LOW VCESAT IGBT 650V 75A TO2 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.1V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT

文件：246.44 Kbytes Page：9 Pages

Field Stop Trench IGBT 650 V, 75 A

文件：340.62 Kbytes Page：9 Pages

Hybrid Field Stop Trench IGBT 650 V, 75 A, TO247

文件：261.649 Kbytes Page：10 Pages