Field Stop Trench IGBT 50 A, 650 V

Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Ty

Hybrid IGBT, 50 A, 650 V

Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless

Field Stop Trench IGBT 50A, 650V

文件：244.47 Kbytes Page：8 Pages

Field Stop Trench IGBT 50A, 650V

文件：257.19 Kbytes Page：9 Pages

Hybrid IGBT 50A, 650V

文件：345.82 Kbytes Page：10 Pages

IGBT - Field Stop, Trench 650 V, 50 A

文件：548.99 Kbytes Page：10 Pages