型号 功能描述 生产厂家 企业 LOGO 操作
FGB40N6S2T

IGBT 600V 75A 290W TO263AB

ONSEMI

安森美半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of t

Fairchild

仙童半导体

600V, SMPS II Series N-Channel IGBT

General Description The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc

Fairchild

仙童半导体

FGB40N6S2T产品属性

  • 类型

    描述

  • 型号

    FGB40N6S2T

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS II Series

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-1-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
onsemi(安森美)
25+
D2PAK(TO-263)
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
FREESCALE
23+
BGA
6589
原厂正品绝对优势假一赔十
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
FAIRCHILD
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
三年内
1983
只做原装正品
ON(安森美)
25+
D2PAK-3
500000
源自原厂成本,高价回收工厂呆滞
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ONSemiconductor
24+
NA
3476
进口原装正品优势供应

FGB40N6S2T数据表相关新闻

  • FGD5T120SH IGBT 晶体管 1200V 5A Field Stop Trench IGBT

    原装现货 原厂正品 假一罚十

    2022-3-30
  • FGH15T120SMD

    FGH15T120SMD

    2021-9-7
  • FGA60N65SMD原装正品 假一赔十

    焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!

    2021-1-14
  • FGA60N65SMD只有原装深圳现货

    焕盛达竭诚为广大客户提供一站式配套服务,解决您的BOM表采购之痛,让您采购无忧!

    2020-12-31
  • FGH40N60SFDTU

    650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管

    2020-6-29
  • FGA60N65SMD

    650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管

    2020-6-29