位置：首页 > IC中文资料第862页 > FGB30N6S2T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FGB30N6S2T | 600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and re | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
600V, SMPS II Series N-Channel IGBT 文件：259.31 Kbytes Page：11 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
FGB30N6S2T产品属性
- 类型
描述
- 型号
FGB30N6S2T
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS II Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
FAIRCHILD/仙童 |
25+ |
TO-263 |
20 |
原装正品,假一罚十! |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Fairchild仙童 |
22+ |
TO263AB |
25000 |
只做原装进口现货,专注配单 |
|||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
ON |
23+ |
TO-263 |
6800 |
原装正品,力挺实单 |
|||
onsemi |
25+ |
TO-263-3 D?Pak(2 引线 + 接片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
原装正品 |
23+ |
TO-263 |
53821 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ON |
21+ |
DNA |
80000 |
公司现货,有挂就有货。 |
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FGB30N6S2T规格书下载地址
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650 V TO-247-4 IGBT 晶体管 , 4.5 kV IGBT 晶体管 , 650 V TO-247 IGBT 晶体管 , 1200 V Si 300 A IGBT 晶体管 , 650 V Si 100 A IGBT Transistors IGBT 晶体管 , 600 V Single Through Hole 40 A IGBT 晶体管
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DdatasheetPDF页码索引
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