62mm C-Serien Modul mit CoolSiC??Trench MOSFET

Electrical Features • High current density • Low switching losses Potential Applications • High Frequency Switching application • DC/DC converter • Solar applications • UPS systems

1200 V CoolSiC™ MOSFET双管模块

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 420 A / IDRM = 840 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 420 A / IDRM = 840 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

62mm C-Serien Modul mit CoolSiC??Trench MOSFET und bereits aufgetragenem Thermal Interface meterial

Mechanical Features • Pre-applied Thermal Interface Material Electrical Features • High current density • Lows witching losses Potential Applications • High Frequency Switching application • DC/DC converter • Solar applications • UPS systems

封装/外壳：模块 包装：托盘 描述：MEDIUM POWER 62MM 分立半导体产品 晶体管 - IGBT - 模块

CoolSiC ™ MOSFET半桥模块 1200 V

封装/外壳：模块 包装：托盘 描述：MEDIUM POWER 62MM 分立半导体产品 晶体管 - IGBT - 模块

1200 V CoolSiC™ MOSFET双管模块