-20V P沟道1.5 V PowerTrench®薄型WL-CSP MOSFET

FDZ391P的设计采用飞兆先进的1.5 V PowerTrench工艺和最新“低间距”薄型WLCSP封装工艺，可最大限度地减小PCB空间和RDS(on)。 先进的WLCSP MOSFET彰显了封装技术的突破性进展，使该器件将卓越的传热特性、超薄型封装、低栅极电荷和低rDS(on)融合为一体。 •VGS = -4.5 V，ID = -1 A时，最大RDS(on) = 85mΩ\n•VGS = -3 V，ID = -1 A时，最大RDS(on) = 123mΩ\n•VGS = -3 V，ID = -1 A时，最大RDS(on) = 200mΩ\n•只占用1.5 mm2的PCB面积\n•超薄封装： 安装在PCB上时高度低于0.4 mm\n•符合RoHS标准;

P-Channel 1.5 V PowerTrench짰 Thin WL-CSP MOSFET

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Phase Control SCR 490 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Phase Control SCR 490 Amperes Avg 1300-1800 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Silicon Complementary Transistors General Purpose

Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 10A Collector Current ● Low Leakage Current: ICEO = 0.7mA @ VCE = 60V ● Excellent DC Gain: hFE = 4

LM391 Audio Power Driver

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