N 沟道 2.5V 额定 PowerTrench® MOSFET 20V，0.6A，0.3Ω

此单N沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计，用以优化RDS(ON) @ VGS = 2.5V。 • • 600 mA，20 V\n• RDS(ON) = 300 mΩ @ VGS = 4.5 V\n• RDS(ON) = 500 mΩ @ VGS = 2.5 V• 静电放电(ESD)保护二极管（注3）• 符合 RoHS 标准\n• ESD Protection Diode (note 3)\n• RoHS Compliant;

FDY302NZ Single N-Channel 2.5V Specified PowerTrench짰 MOSFET

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N-Channel Enhancement Mode MOSFET

Features © Vos=20Vb=08A Roson=250mQ @ Vos=4.5V (typ) Roson = 300m0@ Ves=2.5V (typ) * ESD Protection

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

SUPERFAST RECOVERY RECTIFIERS VOLTAGE 50 to 800 Volts CURRENT 3.0 Ampere FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage.

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

Direct Joint Type

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