N 沟道 2.5V 指定 PowerTrench® MOSFET 20V，0.2A，5Ω

此单N沟道MOSFET采用飞兆半导体的高级Power Trench工艺设计而成，用于优化RDS(ON) @ VGS = 2.5v。 •200 mA、20 V\n•RDS(ON) = 5 Ω @ VGS = 4.5 V\n•RDS(ON) = 7 Ω @ VGS = 2.5 V\n•静电放电(ESD)保护二极管（注3）\n•符合RoHS标准;

Single N-Channel 2.5V Specified PowerTrench MOSFET

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N-Channel Enhancement Mode MOSFET

Features © Vos=20Vb=08A Rosion=250mQ @ Vos=4.5V (typ) Rosion = 300m0@ Ves=2.5V (typ) + ESD Protection

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

Operational Amplifiers

A general purpose operational amplifier that allows the user to choose the compensation capacitor best suited to his needs. With proper compensation, summing amplifier slew rates to 10 V/µs can be obtained. • Low Input Offset Current: 20 nA Maximum Over Temperature Range • External Frequency Com

30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirem