P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 12 mΩ @ V

P-Channel 1.8V Specified PowerTrench MOSFET

文件：157.75 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 12 mW @ V

P-Channel 1.8V Specified PowerTrench MOSFET

文件：96.56 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：157.75 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes Page：5 Pages

Fuse Blocks and Clips - For NANO2 Surface Mount Fuses

文件：102.23 Kbytes Page：1 Pages

Two Axis, Micro-stick Controller With Optional Momentary Switch

文件：377.96 Kbytes Page：2 Pages

WILMAR??Protective Relays - 250 Series, Over/Undervoltage

文件：72.11 Kbytes Page：1 Pages

3M??Lapping Film Aluminum Oxide 254X

文件：68.76 Kbytes Page：2 Pages

Multi Tuner Set-Top Boxes

文件：256.16 Kbytes Page：6 Pages