P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 12 mΩ @ V

P-Channel 1.8V Specified PowerTrench MOSFET

文件：157.75 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 12 mW @ V

P-Channel 1.8V Specified PowerTrench MOSFET

文件：96.56 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：157.75 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes Page：5 Pages

P-Channel 1.8V Specified PowerTrench MOSFET

文件：230.37 Kbytes Page：5 Pages

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