Digital FET, P-Channel

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Digital FET, P-Channel

P-Channel Enhancement MOSFET

■ Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

P-Channel Enhancement MOSFET

Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)

Digital FET, P-Channel

General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially f

P-Channel MOSFET

P 沟道，数字 FET，-25V，-0.46A，1.1Ω

Digital FET, P-Channel

文件：63.91 Kbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET P-CHANNEL 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel 20-V (D-S) MOSFET

文件：1.039829 Mbytes Page：9 Pages

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 3.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volt CURRENT 3 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Fast switching for high efficiency. • Lead free in compliance with EU RoHS

Negative Regulator

文件：161.59 Kbytes Page：6 Pages

Negative Regulator

文件：161.59 Kbytes Page：6 Pages