Digital FET, P-Channel

General Description This P-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for

丝印代码：.39K；P-Channel Mosfet

Product Summary « Voss= 20V, Ip=-07A + Ros(on) 520mO@-4.5V Max) 750mQ@-2.5V (Max) 950mQ @-1.8V(TYP)

数字 FET，P 沟道，-25V，-0.12A，10Ω

这些P沟道逻辑级增强模式场效应晶体管采用了飞兆半导体专有的高单元密度、DMOS技术。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 该器件特别为低电压应用设计，以替代数字晶体管。 由于不需要偏置电阻，该P沟道FET能替代一些具有不同偏置电阻的数字晶体管，如DTCx和DCDx系列。 •-25V、-0.12A（连续值）、-0.5A（峰值） RDS(ON) = 13 Ω @ VGS= -2.7 V、RDS(ON) = 10 Ω @ VGS = -4.5 V。\n•栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。\n•栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。\n•紧凑型工业标准SOT-23表面贴装封装。\n•用一个DMOS FET替代多个PNP数字晶体管（DTCx和DCDx）。;

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

SUPERFAST RECOVERY RECTIFIERS VOLTAGE 50 to 800 Volts CURRENT 3.0 Ampere FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage.

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

Direct Joint Type

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