Digital FET, P-Channel

General Description This P-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for

P-Channel Mosfet

Product Summary « Voss= 20V, Ip=-07A + Ros(on) 520mO@-4.5V Max) 750mQ@-2.5V (Max) 950mQ @-1.8V(TYP)

数字 FET，P 沟道，-25V，-0.12A，10Ω

Socket terminal strip Screw connection

The socket terminal strip 302 is one of our smallest socket terminal strips. It is available in 8 mm pitch with 1- to 12-pole design and can be easily cut to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-ver

2 (50.8 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Screw, servo and bushing mount types available • Large range of ohmic values: 5  to 85 k • Extra taps upon request • Gangable up to 6 sections on a same shaft • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

SCREW TYPE SERIES

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Indicates Phase Presence

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Extra taps upon request

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