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FDU7N60NZTU价格

参考价格:¥3.3690

型号:FDU7N60NZTU 品牌:Fairchild 备注:这里有FDU7N60NZTU多少钱,2026年最近7天走势,今日出价,今日竞价,FDU7N60NZTU批发/采购报价,FDU7N60NZTU行情走势销售排行榜,FDU7N60NZTU报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FDU7N60NZTU

功率 MOSFET,N 沟道,UniFETTM II,600 V,5.5 A,1.25 Ω,IPAK

UniFETTM II MOSFET 是飞兆半导体的高压 MOSFET 系列产品,基于平面条形技术和 DMOS 技术。该先进MOSFET系列产品在平面 MOSFET 产品中具有最小的通态电阻,还可提供卓越的开关性能和更高的雪崩能量强度。此外,内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。该器件系列适用于开关电源转换器应用,如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 1.05Ω (典型值)@ VGS = 10V, ID = 2.75A栅极电荷低(典型值:13nC)\n•低 Crss(典型值7pF)\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•改进了 ESD 防护能力\n•符合 RoHS 标准\n• RoHS Compliant;

ONSEMI

安森美半导体

FDU7N60NZTU

N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 廓

文件:668.7 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied

PHILIPS

飞利浦

FDU7N60NZTU产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    600

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    5

  • ID Max (A):

    5.5

  • PD Max (W):

    90

  • RDS(on) Max @ VGS = 10 V(mΩ):

    1250

  • Qg Typ @ VGS = 4.5 V (nC):

    0.49

  • Qg Typ @ VGS = 10 V (nC):

    13

  • Ciss Typ (pF):

    550

  • Package Type:

    IPAK-3/DPAK-3 STRAIGHT LEAD

更新时间:2026-7-31 16:59:00
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