丝印代码：86256；N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ

Features Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using

N 沟道，PowerTrench® MOSFET，150V，1.2A，845mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻而定制的。 旨在为增强ESD电压电平而增加了G-S齐纳管。 •VGS = 10V，ID = 1.2 A时，最大rDS(on) = 845mΩ\n•VGS = 6.0 V，ID = 1.0 A时，最大rDS(on) = 1280mΩ\n•与其他沟道技术相比，具有极低的Qg和Qgd \n•快速开关速度\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 150 V, 1.2 A, 845 m廓

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