Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features · –5A, –20 V, RDS(ON)= 55 mW@ VGS= –4.5

Dual P-Channel 2.5V Specified PowerTrench MOSFET

文件：372.37 Kbytes Page：5 Pages

Dual P-Channel 2.5V Specified PowerTrench MOSFET

Dual P-Channel 2.5V Specified PowerTrench짰 MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well

Dual P-Channel 2.5V Specified PowerTrench MOSFET

文件：372.37 Kbytes Page：5 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：191.61 Kbytes Page：8 Pages

双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-3.8A，75mΩ

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05723 Mbytes Page：9 Pages

Dual P-Channel 2.5V Specified PowerTrench® MOSFET

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05717 Mbytes Page：9 Pages

RS-232/423 Low Cap, #24-8c, FPO, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOP-8 Package Applications • Power Management in Noteb

Hysteretic Boost-Buck (cuk) LED Driver IC

文件：515.35 Kbytes Page：9 Pages