丝印代码：FDS8884；30V N-Channel MOSFET

Features Low gate charge VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

N 沟道 PowerTrench® MOSFET 30V，8.5A，23mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •VGS = 10V，ID = 8.5A时，最大RDS(on) = 23mΩ\n•VGS = 4.5V，ID = 7A时，最大rDS(on) = 30 mΩ\n•低栅极电荷 \n•100%经过RG测试\n•符合RoHS标准;

N-Channel PowerTrench MOSFET 30V, 8.5A, 23mOhm

General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ Max rDS

High Voltage Cathode Decoder/Driver

文件：98.19 Kbytes Page：4 Pages

High Voltage Cathode Decoder/Driver

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RGB PROCESSOR IC

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(10680 PIXELS x 4 LINES) x 3 COLOR CCD LINEAR IMAGE SENSOR

文件：285.88 Kbytes Page：28 Pages

(10680 PIXELS x 4 LINES) x 3 COLOR CCD LINEAR IMAGE SENSOR

文件：285.88 Kbytes Page：28 Pages