P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 95mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching

AXL E PB DI8 DO4 2A M12 6M

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Heyco-Flex™ I Liquid Tight Conduit

文件：123.91 Kbytes Page：1 Pages

Heyco-Flex™ I Liquid Tight Conduit

文件：123.91 Kbytes Page：1 Pages