Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage an

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，5.5A，40mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •5.5 A，30 V。 RDS(ON) = 0.040 Ω @ VGS = 10 V，RDS(ON) = 0.055 Ω @ VGS = 4.5 V。\n•开关速度快。\n•低栅极电荷（典型值5 nC）。\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力。;

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

Dual N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 6.5 A RDS(ON)

BIPOLAR LINEAR INTEGRATED CIRCUIT (STEREO SOUND CONTROL SYSTEM)

STEREO SOUND CONTROL SYSTEM

0.560-INCH SEVEN SEGMENT DISPLAYS

文件：511.82 Kbytes Page：5 Pages

0.560-INCH SEVEN SEGMENT DISPLAYS

文件：535.26 Kbytes Page：6 Pages

5V TO 3.3V/2.5V 25 WATT DUAL OUTPUT INTEGRATED SWITCHING REGULATOR

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