双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，7.5A，17mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •7.5A, 30V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

Dual N-Channel Logic Level PowerTrench MOSFET

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丝印代码：6910；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | RosOM=16 mO@VES=10v © Ros =20 MO @VGS=4.5V | ® Super high density cell design for extremely low RoSON | ® Exceptional on-resistance and maximum DC curent cy |

ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION

DESCRIPTION The device is a pwm controller for high performance dc-dc conversion from 3.3V, 5V and 12V buses. The output voltage is adjustable down to 0.9V; higher voltages can be obtained with an external voltage divider. High peak current gate drivers provide for fast switching to the externa

0.56 INCH (14.2 MM) DUAL DIGIT STICK DISPLAY

0.56 inch ( 14.22 mm ) DUAL DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVD-6X10/6X40 is 0.56 inch (14.22mm) height dual digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. High efficirncy red displays has red face and red segments. Bright red displays has balck face and red segments. Green and yellow displ

0.560-INCH SEVEN SEGMENT DISPLAYS

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0.560-INCH SEVEN SEGMENT DISPLAYS

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